منابع مشابه
Atomic layer deposition of ZnS nanotubes.
We report on the growth of high-aspect-ratio (approximately > 300) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at temperatures as low as 75 degrees C. Various characterization techniques are employed to gain information on the composition, morphology and crysta...
متن کاملZnS-based photonic crystal phosphors fabricated using atomic layer deposition
The infiltration by atomic layer deposition of three-dimensional opal structures has been investigated as a means of fabricating photonic crystal phosphors. ZnS:Mn infiltrated and inverse opals have been demonstrated with filling fractions >95%. Characterization of these structures by scanning electron microscopy, specular reflectance, and photoluminescence is reported. Specular reflectance mea...
متن کاملAtomic Layer Deposition of TiO
Additional resources and features associated with this article are available within the HTML version: • Supporting Information • Links to the 4 articles that cite this article, as of the time of this article download • Access to high resolution figures • Links to articles and content related to this article • Copyright permission to reproduce figures and/or text from this article High surface a...
متن کاملHigh-filling-fraction inverted ZnS opals fabricated by atomic layer deposition
The infiltration of three-dimensional opal structures has been investigated by atomic layer deposition. Demonstrations using ZnS:Mn show that filling fractions .95% can be achieved and that the infiltrated material is of high-quality crystalline material as assessed by photoluminescence measurements. These results demonstrate a flexible and practical pathway to attaining high-performance photon...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanotechnology
سال: 2009
ISSN: 0957-4484,1361-6528
DOI: 10.1088/0957-4484/20/32/325602